This item will not be restocked when depleted and should be avoided for new designs.
This product entered limited availablity on 06/23/2020.
View RIKs with Limited Availability for a complete list.
Suggested Replacement: RI8589C
Expiration Reason: The 'C' upgrades include better accuracy at high voltages and the addition of an 'HV4' negative supply aimed at GAN devices.
Aditional replacements may be found by searching for RI8589B (change the REV letter) or High Power Supply/Pulser TIM.
High Power Supply/Pulser TIM
Part Number: RI8589B
The RI8589 High Power Supply/Pulser TIM (a.k.a. "FET Pulser") provides an all-in-one production solution for power device parametric measurement, characterization, and drive supply. With a broad measurement range from sub- µA to 200V/20A, this instrument allows evaluation of power FETs, BJTs, and IGBT devices as well as wide band-gap materials such as GaN and SiC. The RI8589 enables precise, small on-resistance measurements and 10µs fast pulse capability for complete power device characterization, temperature stress, and failure analysis.
High Power Supply/Pulser RI8589
The major change in Rev B is to add 1Msps ADCs to allow profiling the voltage or current during the pulse. This gives 1 uSecond step size. There is no change is the measured accuracy.
With this comes high speed averaging on voltage and current. Averages are now at the 1 MSps rate vs 0.08 before. The average computation is now in hardware so the test time is much faster ( mS vs 10s of mS ).
The pulse current measurement has been changed to bipolar so that we can measure current undershoots during the pulse. This also improves the accuracy around zero current.
The current limit accuracy has been improved from 6 bits to 11.
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